Compact Charge Modeling of Double-Gate MOSFETs Considering the Density-Gradient Equation
A compact charge model for double-gate metal-oxide-semiconductor field-effect transistors with the quantum confinement effect is presented. In addition to the Poisson equation, the density-gradient equation with a realistic boundary condition is considered to include the quantum confinement effect....
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8663333/ |