Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping
In this study, the p-type Ga-doped Cu3Sb1−xGaxSe4 compounds were fabricated by melting, annealing, grinding, and spark plasma sintering (SPS). The transport properties of Ga-doped Cu3Sb1−xGaxSe4 compounds were investigated. As Ga content increased, the hole concentration of Cu3Sb1−xGaxSe4 compounds...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-10-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/10/10/1524 |