Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM

Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM

In this paper, we demonstrated memory and energy storage dual operation in GeS2/Ag conducting bridge RAM. Both operations are based on electrochemical reactions and Ag diffusion in the GeS2 electrolyte. Depending on specific bias and current conditions, the same device can be used for data or energy...

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Bibliographic Details
Main Authors: Daeseok Lee, Sami Oukassi, Gabriel Molas, Catherine Carabasse, Raphael Salot, Luca Perniola
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
CBRAM
electrochemical metallization cell
ion migration
energy storage
nano battery
dual operation
Online Access:https://ieeexplore.ieee.org/document/7916902/

Internet

https://ieeexplore.ieee.org/document/7916902/

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