Recent progress on metal halide perovskite field-effect transistors
Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolu...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2021-07-01
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| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/15980316.2021.1957725 |