Surface Recombination Investigation in Thin 4H-SiC Layers

Surface Recombination Investigation in Thin 4H-SiC Layers

n- and p-type 4H-SiC epilayers were grown on heavily doped SiC substrates. The thickness of the p-type layer was 7 µm and the doping level around 10<sup>17</sup> cm <sup>3</sup>, while the n-type epilayers were 15 µm thick and had a doping concentration of 3 - 5*10<sup>...

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Bibliographic Details
Main Authors: Karolis GULBINAS, Vytautas GRIVICKAS, Haniyeh P. MAHABADI, Muhammad USMAN, Anders HALLÉN
Format: Article
Language:English
Published: Kaunas University of Technology 2011-07-01
Series:Medžiagotyra
Subjects:
surface recombination velocity
carrier lifetime
silicon carbide
Online Access:http://matsc.ktu.lt/index.php/MatSc/article/view/479

Internet

http://matsc.ktu.lt/index.php/MatSc/article/view/479

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