Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias
In this study, a p-GaAs0.4Sb0.6/n-InAs nanowire backward diode (NW BWD) with a large sensitivity of 706 kV/W, exceeding that of Schottky barrier diodes (SBDs), was developed for low-power microwave rectification at zero bias. The interband tunneling of the NW BWDs under zero-bias condition displayed...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0006061 |