Impact ionization by hot carriers in a black phosphorus field effect transistor
Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2018-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-05981-0 |