Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskit...

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Main Authors: Chankeun Yoon, Jinhong Min, Jaemin Shin, Changhwan Shin
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Coercive field
ferroelectric capacitor
nanoelectromechanical system
negative capacitance
remnant polarization
Online Access:https://ieeexplore.ieee.org/document/9113250/
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spelling doaj-971f96633ea34ffda970fcc0b061dee72021-03-29T18:50:38ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01860861310.1109/JEDS.2020.30012729113250Device Design Guideline for HfO&#x2082;-Based Ferroelectric-Gated Nanoelectromechanical SystemChankeun Yoon0Jinhong Min1Jaemin Shin2Changhwan Shin3Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaPrevious studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskite ferroelectric materials, which is incompatible in complementary metal-oxide-semiconductor (CMOS) fabrication processes. In this work, a CMOS-compatible HfO<sub>2</sub>-based ferroelectric material is used for the NC + NEM system. The effects of the ferroelectric properties [i.e., remnant polarization (P<sub>r</sub>) and coercive field (E<sub>c</sub>)] on the NC + NEM system performance are studied in detail. The results show that the NC + NEM system can operate as a relay or a memory device depending on the Pr and Ec values. Moreover, the pull-in/out voltages of the NC + NEM system are more sensitively affected by E<sub>c</sub> rather than Pr and decrease as Ec increases. The device design guideline with appropriate Pr and Ec values of the HfO<sub>2</sub>-based ferroelectric material is thus developed and discussed to improve the electrical characteristics of NC + NEM relay/memory devices.https://ieeexplore.ieee.org/document/9113250/Coercive fieldferroelectric capacitornanoelectromechanical systemnegative capacitanceremnant polarization
collection DOAJ
language English
format Article
sources DOAJ
author Chankeun Yoon
Jinhong Min
Jaemin Shin
Changhwan Shin
spellingShingle Chankeun Yoon
Jinhong Min
Jaemin Shin
Changhwan Shin
Device Design Guideline for HfO&#x2082;-Based Ferroelectric-Gated Nanoelectromechanical System
IEEE Journal of the Electron Devices Society
Coercive field
ferroelectric capacitor
nanoelectromechanical system
negative capacitance
remnant polarization
author_facet Chankeun Yoon
Jinhong Min
Jaemin Shin
Changhwan Shin
author_sort Chankeun Yoon
title Device Design Guideline for HfO&#x2082;-Based Ferroelectric-Gated Nanoelectromechanical System
title_short Device Design Guideline for HfO&#x2082;-Based Ferroelectric-Gated Nanoelectromechanical System
title_full Device Design Guideline for HfO&#x2082;-Based Ferroelectric-Gated Nanoelectromechanical System
title_fullStr Device Design Guideline for HfO&#x2082;-Based Ferroelectric-Gated Nanoelectromechanical System
title_full_unstemmed Device Design Guideline for HfO&#x2082;-Based Ferroelectric-Gated Nanoelectromechanical System
title_sort device design guideline for hfo&#x2082;-based ferroelectric-gated nanoelectromechanical system
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2020-01-01
description Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskite ferroelectric materials, which is incompatible in complementary metal-oxide-semiconductor (CMOS) fabrication processes. In this work, a CMOS-compatible HfO<sub>2</sub>-based ferroelectric material is used for the NC + NEM system. The effects of the ferroelectric properties [i.e., remnant polarization (P<sub>r</sub>) and coercive field (E<sub>c</sub>)] on the NC + NEM system performance are studied in detail. The results show that the NC + NEM system can operate as a relay or a memory device depending on the Pr and Ec values. Moreover, the pull-in/out voltages of the NC + NEM system are more sensitively affected by E<sub>c</sub> rather than Pr and decrease as Ec increases. The device design guideline with appropriate Pr and Ec values of the HfO<sub>2</sub>-based ferroelectric material is thus developed and discussed to improve the electrical characteristics of NC + NEM relay/memory devices.
topic Coercive field
ferroelectric capacitor
nanoelectromechanical system
negative capacitance
remnant polarization
url https://ieeexplore.ieee.org/document/9113250/
work_keys_str_mv AT chankeunyoon devicedesignguidelineforhfox2082basedferroelectricgatednanoelectromechanicalsystem
AT jinhongmin devicedesignguidelineforhfox2082basedferroelectricgatednanoelectromechanicalsystem
AT jaeminshin devicedesignguidelineforhfox2082basedferroelectricgatednanoelectromechanicalsystem
AT changhwanshin devicedesignguidelineforhfox2082basedferroelectricgatednanoelectromechanicalsystem
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