Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskit...

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Bibliographic Details
Main Authors: Chankeun Yoon, Jinhong Min, Jaemin Shin, Changhwan Shin
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9113250/