Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1−x (Hf-Al-O) and Pt/SrBi2Ta2O9/HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more...

Full description

Bibliographic Details
Main Authors:	Mitsue Takahashi, Shigeki Sakai
Format:	Article
Language:	English
Published:	MDPI AG 2010-11-01
Series:	Materials
Subjects:	FeFET semiconductor memory nonvolatile memory nonvolatile logic
Online Access:	http://www.mdpi.com/1996-1944/3/11/4950/

Similar Items

Area-Scalable 10<sup>9</sup>-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process
by: Mitsue Takahashi, et al.
Published: (2021-01-01)

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
by: Wei-Xiang You, et al.
Published: (2020-01-01)

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer
by: Qiuhong Tan, et al.
Published: (2018-04-01)

A Nonvolatile Fast-Read Two-Transistor SRAM Based on Spintronic Devices
by: Chenyun Pan, et al.
Published: (2017-01-01)

Modeling and Circuit Design of Associative Memories With Spin–Orbit Torque FETs
by: Olalekan Afuye, et al.
Published: (2019-01-01)

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/Ca<sub>x</sub>Sr<sub>1–x</sub>Bi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors
by: Wei Zhang, et al.
Published: (2019-01-01)

Device design and process integration of high density nonvolatile memory devices
by: Ferdousi, Fahmida
Published: (2011)

800 MB/s DDR NAND Flash Memory Multi-Chip Package With Source-Synchronous Interface for Point-to-Point Ring Topology
by: Peter Gillingham, et al.
Published: (2013-01-01)

Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays
by: Brandon Rumberg, et al.
Published: (2021-01-01)

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications
by: Chia-Hua Ho, et al.
Published: (2012-03-01)

ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
by: Huan Liu, et al.
Published: (2020-05-01)

On-Chip Recovery Operation for Self-Aligned Nitride Logic Non-Volatile Memory Cells in High-K Metal Gate CMOS Technology
by: Po-Yen Lin, et al.
Published: (2015-01-01)

The new approach to the creation of the nonvolatile memory based on Si-MOS-transistors
by: Chucheva G. V., et al.
Published: (2011-06-01)

HMB-I/O: Fast Track for Handling Urgent I/Os in Nonvolatile Memory Express Solid-State Drives
by: Kyusik Kim, et al.
Published: (2020-06-01)

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
by: Yue Peng, et al.
Published: (2019-04-01)

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
by: Dayane Reis, et al.
Published: (2019-01-01)

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
by: Siqing Zhang, et al.
Published: (2020-08-01)

Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device
by: Ju-Young Choi, et al.
Published: (2018-08-01)

Reliability Analysis of Nanocrystal Embedded High-k Nonvolatile Memories
by: Yang, Chia-Han
Published: (2011)

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application
by: Wei-Dong Liu, et al.
Published: (2020-01-01)

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films
by: Lin, Chen-Han
Published: (2012)

Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element
by: Soumitra Pal, et al.
Published: (2019-01-01)

Benchmark of Ferroelectric Transistor-Based Hybrid Precision Synapse for Neural Network Accelerator
by: Yandong Luo, et al.
Published: (2019-01-01)

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications
by: Wenchao Xu, et al.
Published: (2017-04-01)

A Ferroelectric FET-Based Processing-in-Memory Architecture for DNN Acceleration
by: Yun Long, et al.
Published: (2019-01-01)

Electrically Controlled Meta-Switch With Nonvolatile Functionality
by: Yan Li, et al.
Published: (2019-01-01)

Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory
by: Evelyn T. Breyer, et al.
Published: (2020-01-01)

Phase Change Pipe for Nonvolatile Routing
by: Nadim Kanan, et al.
Published: (2016-01-01)

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications
by: Thilini K. Ekanayaka, et al.
Published: (2021-03-01)

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics
by: Kai Su, et al.
Published: (2020-01-01)

Experimental search for high-performance ferroelectric tunnel junctions guided by machine learning
by: Chen, D., et al.
Published: (2022)

Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
by: Liu, Tong
Published: (2013)

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
by: Houfang Liu, et al.
Published: (2020-10-01)

Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions
by: Zhiwei Liu, et al.
Published: (2021-01-01)

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure
by: Jiawei Wang, et al.
Published: (2021-08-01)

A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration
by: Borna Obradovic, et al.
Published: (2018-01-01)

Fabrication of Sn@Al<sub>2</sub>O<sub>3</sub> Core-shell Nanoparticles for Stable Nonvolatile Memory Applications
by: Jong-Hwan Yoon
Published: (2019-09-01)

Electrode Material Dependence of Resistance Change Behavior in Ta<sub>2</sub>O<sub>5</sub> Resistive Analog Neuromorphic Device
by: Hisashi Shima, et al.
Published: (2018-01-01)

Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf<sub>0.5</sub>Zr<sub>0.5</sub>O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory
by: Hao Jiang, et al.
Published: (2020-01-01)

A Feasibility Study on Ferroelectric Shadow SRAMs Based on Variability-Aware Design Optimization
by: Kiyoshi Takeuchi, et al.
Published: (2019-01-01)