Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1−x (Hf-Al-O) and Pt/SrBi2Ta2O9/HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more...

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Bibliographic Details
Main Authors: Mitsue Takahashi, Shigeki Sakai
Format: Article
Language:English
Published: MDPI AG 2010-11-01
Series:Materials
Subjects:
FeFET
semiconductor memory
nonvolatile memory
nonvolatile logic
Online Access:http://www.mdpi.com/1996-1944/3/11/4950/

Internet

http://www.mdpi.com/1996-1944/3/11/4950/

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