Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

Abstract The Bi content in GaAs/GaAs1 − x Bi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanni...

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Bibliographic Details
Main Authors: N. Baladés, D. L. Sales, M. Herrera, C. H. Tan, Y. Liu, R. D. Richards, S. I. Molina
Format: Article
Language:English
Published: SpringerOpen 2018-04-01
Series:Nanoscale Research Letters
Subjects:
GaAsBi
Ac-HAADF-STEM
Bi-clusters
Online Access:http://link.springer.com/article/10.1186/s11671-018-2530-5

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http://link.springer.com/article/10.1186/s11671-018-2530-5

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