Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure
In this study, we developed a V-NAND with an improved IGZO-P type (IP) floating filler (FF) structure based on an IGZO channel verified in previous studies and demonstrated that it has a very fast erase speed through device simulation. The proposed FF structure can supply holes generated through the...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-06-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/13/1561 |