Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N2 ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into the...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4930980 |