Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors
Based on the nano-polysilicon thin film transistors (TFTs), a high-sensitivity pressure sensor was designed and fabricated in this paper. The pressure sensing element is composed of a Wheatstone bridge with four nano-polysilicon TFTs designed on different positions of the square silicon diaphragm. V...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4938517 |