High Efficiency Energy Harvesters in 65nm CMOS Process for Autonomous IoT Sensor Applications
Two integrated, highly efficient RF-to-dc rectifier circuits are presented. The rectifier circuits are based on improved Dickson charge pump models and are fabricated using 65-nm CMOS GlobalFoundries process. The designs utilize diode-connected metal-oxide-semiconductor field-effect transistors inst...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8214097/ |