Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure
The dislocations and surface roughness in an AlGaN/AlN/GaN heterostructure were analyzed by transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively, and the mobility limitation mechanisms in the two-dimensional electron gas (2DEG) were studied using a theoretical model...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2015/903098 |