A metal oxide TFT gate driver with a single negative power source employing a boosting module

A metal oxide TFT gate driver with a single negative power source employing a boosting module

This paper presents a new gate driver integrated by In-Zn-O thin-film transistors (IZO TFTs) with the etch stop layer (ESL) structure, in which only a single negative power source is used on account of a new boosting module. The boosting module is controlled only by the VIN signal for generating a l...

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Bibliographic Details
Main Authors: Yan-Gang Xu, Jun-Wei Chen, Wen-Xing Xu, Lei Zhou, Wei-Jing Wu, Jian-Hua Zou, Miao Xu, Lei Wang, Jun-Biao Peng
Format: Article
Language:English
Published: Taylor & Francis Group 2020-01-01
Series:Journal of Information Display
Subjects:
in-zn-o thin-film transistors (izo tfts)
gate driver
bi-side
single negative power source
Online Access:http://dx.doi.org/10.1080/15980316.2019.1689190

Internet

http://dx.doi.org/10.1080/15980316.2019.1689190

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