Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvem...

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Bibliographic Details
Main Authors: Huolin Huang, Feiyu Li, Zhonghao Sun, Nan Sun, Feng Zhang, Yaqing Cao, Hui Zhang, Pengcheng Tao
Format: Article
Language:English
Published: MDPI AG 2019-02-01
Series:Electronics
Subjects:
vertical field-effect transistor (VFET)
back current blocking layer (BCBL)
gallium nitride (GaN)
normally off power devices
Online Access:https://www.mdpi.com/2079-9292/8/2/241

Internet

https://www.mdpi.com/2079-9292/8/2/241

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