Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C
A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\<sup>2</sup> V<sup>-1&...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6849425/ |