Modeling and Circuit Design of Associative Memories With Spin–Orbit Torque FETs

Modeling and Circuit Design of Associative Memories With Spin–Orbit Torque FETs

This article introduces a circuits model for a proposed spin-based device called a spin-orbit torque field-effect transistor (SOTFET) that can operate as a nonvolatile memory and logic device. The SOTFET utilizes an FET structure with a ferromagnetic-multiferroic (MF) gate-stack that enables read/co...

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Bibliographic Details
Main Authors: Olalekan Afuye, Xiang Li, Felicia Guo, Debdeep Jena, Daniel C. Ralph, Alyosha Molnar, Huili Grace Xing, Alyssa Apsel
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Beyond CMOS
compact models
ferroelectric field-effect transistor (FeFET)
logic-in-memory
multiferroics (MFs)
nonvolatile memory
Online Access:https://ieeexplore.ieee.org/document/8894388/

Internet

https://ieeexplore.ieee.org/document/8894388/

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