Fabrication of Tm-doped Ta2O5 thin films using a co-sputtering method

Thulium-doped tantalum-oxide (Ta2O5:Tm) thin films were prepared using a simple co-sputtering method. A remarkable photoluminescence peak having a wavelength of around 800 nm due to Tm3+ was observed from a film annealed at 900 °C for 20 min. The δ-Ta2O5 (hexagonal) phase of the Ta2O5:Tm sputtered...

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Bibliographic Details
Main Authors: K. Miura, T. Osawa, Y. Yokota, T. Suzuki, O. Hanaizumi
Format: Article
Language:English
Published: Elsevier 2014-01-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379714000461