A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices

A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices

This paper presents a general dimension reduction method for the dispersion modeling of current and charge sources of semiconductor devices including HEMTs, LDMOS, and HBTs. The dimensions that are easily handled are represented by the existing empirical or physical functions, while those dimensions...

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Bibliographic Details
Main Authors: An-Dong Huang, Zheng Zhong, Yong-Xin Guo, Wen Wu
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
Dimension reduction
Taylor expansion
empirical model
semiconductor devices
AlGaN/GaN HEMT
LDMOS
Online Access:https://ieeexplore.ieee.org/document/8409953/

Internet

https://ieeexplore.ieee.org/document/8409953/

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