Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al<sub>2</sub>O<sub>3</sub> Based CBRAM

Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al<sub>2</sub>O<sub>3</sub> Based CBRAM

Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al<sub>2</sub>O<sub>3</sub>/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al<sub>2</sub>O<sub>3</sub> device show...

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Bibliographic Details
Main Authors: Asim Senapati, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta, Siddheswar Maikap
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Electronics
Subjects:
Al<sub>2</sub>O<sub>3</sub> oxide-electrolyte
resistive switching
CBRAM
diode
threshold switching
high on/off ratio
Online Access:https://www.mdpi.com/2079-9292/9/7/1106

Internet

https://www.mdpi.com/2079-9292/9/7/1106

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