Correlation of RF impedance with Ar plasma parameters in semiconductor etch equipment using inductively coupled plasma
The correlation of RF impedance with Ar plasma parameters was analyzed in semiconductor etch equipment using inductively coupled plasma. Since the impedance measured by a VI probe installed behind the RF bias matcher had information for plasma and structural parts of chamber simultaneously, the impe...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-02-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/6.0000883 |