FORMATION OF SILICON NANOWIRES BY METAL-ASSISTED CHEMICAL ETCHING AND STUDY OF ITS OPTICAL PROPERTIES

FORMATION OF SILICON NANOWIRES BY METAL-ASSISTED CHEMICAL ETCHING AND STUDY OF ITS OPTICAL PROPERTIES

The results of study and development of silicon nanowires (SiNWs) formation by metal-assisted chemical etching (MACE) are introduced. Linear dependence of SiNWs length from etching time is established. Total and mirror reflectance spectra, Raman scattering spectra of SiNWs and photoluminescence (PL)...

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Bibliographic Details
Main Authors: H. V. Bandarenka, K. V. Girel, S. A. Niauzorau, K. A. Gonchar, V. U. Timoshenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
silicon nanowires
metal-assisted chemical etching
immersion deposition
raman scattering
photoluminescence
Online Access:https://doklady.bsuir.by/jour/article/view/622

Internet

https://doklady.bsuir.by/jour/article/view/622

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