DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

A DC leakage current model accounting for trapping effects under the gate of AlGaN/GaN HEMTs on silicon has been developed. Based on TCAD numerical simulations (with Sentaurus Device), non-local tunneling under the Schottky gate is necessary to reproduce the measured transfer characteristics in a su...

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Bibliographic Details
Main Authors: Raúl Rodríguez, Benito González, Javier García, Gaetan Toulon, Frédéric Morancho, Antonio Núñez
Format: Article
Language:English
Published: MDPI AG 2018-09-01
Series:Electronics
Subjects:
AlGaN/GaN HEMT
gate leakage current
traps
numerical simulation
modeling
Online Access:http://www.mdpi.com/2079-9292/7/10/210

Internet

http://www.mdpi.com/2079-9292/7/10/210

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