GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch e...

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Bibliographic Details
Main Authors: Matthew D. Smith, Jerome A. Cuenca, Daniel E. Field, Yen-chun Fu, Chao Yuan, Fabien Massabuau, Soumen Mandal, James W. Pomeroy, Rachel A. Oliver, Michael J. Uren, Khaled Elgaid, Oliver A. Williams, Iain Thayne, Martin Kuball
Format: Article
Language:English
Published: AIP Publishing LLC 2020-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5129229