GaN-on-diamond technology platform: Bonding-free membrane manufacturing process
GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch e...
Main Authors: | , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-03-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5129229 |