Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model
Abstract Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger–Poisson coupl...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2018-12-01
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| Series: | Journal of Mathematics in Industry |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s13362-018-0056-1 |