Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

Abstract Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger–Poisson coupl...

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Bibliographic Details
Main Authors: Orazio Muscato, Tina Castiglione, Vincenza Di Stefano, Armando Coco
Format: Article
Language:English
Published: SpringerOpen 2018-12-01
Series:Journal of Mathematics in Industry
Subjects:
Nanowires
Semiconductors
Boltzmann equation
Hydrodynamics
Online Access:http://link.springer.com/article/10.1186/s13362-018-0056-1

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http://link.springer.com/article/10.1186/s13362-018-0056-1

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