Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

Abstract Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger–Poisson coupl...

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Main Authors:	Orazio Muscato, Tina Castiglione, Vincenza Di Stefano, Armando Coco
Format:	Article
Language:	English
Published:	SpringerOpen 2018-12-01
Series:	Journal of Mathematics in Industry
Subjects:	Nanowires Semiconductors Boltzmann equation Hydrodynamics
Online Access:	http://link.springer.com/article/10.1186/s13362-018-0056-1

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spelling	doaj-8fe66742163b416f89567aa1da418cc82020-11-25T00:29:51ZengSpringerOpenJournal of Mathematics in Industry2190-59832018-12-018111210.1186/s13362-018-0056-1Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic modelOrazio Muscato0Tina Castiglione1Vincenza Di Stefano2Armando Coco3Department of Mathematics and Computer Science, University of CataniaDepartment of Mathematics and Computer Science, University of CataniaDepartment of Mathematics and Computer Science, University of CataniaSchool of Engineering, Computing and Mathematics, Oxford Brookes UniversityAbstract Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger–Poisson coupled system. The electron transport along the free direction can be tackled using a hydrodynamic model, formulated by taking the moments of the multisubband Boltzmann equation. We shall introduce an extended hydrodynamic model where closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle of Extended Thermodynamics, and in which the main scattering mechanisms such as those with phonons and surface roughness have been considered. By using this model, the low-field mobility of a Gate-All-Around SiNW transistor has been evaluated.http://link.springer.com/article/10.1186/s13362-018-0056-1NanowiresSemiconductorsBoltzmann equationHydrodynamics
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Orazio Muscato Tina Castiglione Vincenza Di Stefano Armando Coco
spellingShingle	Orazio Muscato Tina Castiglione Vincenza Di Stefano Armando Coco Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model Journal of Mathematics in Industry Nanowires Semiconductors Boltzmann equation Hydrodynamics
author_facet	Orazio Muscato Tina Castiglione Vincenza Di Stefano Armando Coco
author_sort	Orazio Muscato
title	Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model
title_short	Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model
title_full	Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model
title_fullStr	Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model
title_full_unstemmed	Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model
title_sort	low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model
publisher	SpringerOpen
series	Journal of Mathematics in Industry
issn	2190-5983
publishDate	2018-12-01
description	Abstract Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger–Poisson coupled system. The electron transport along the free direction can be tackled using a hydrodynamic model, formulated by taking the moments of the multisubband Boltzmann equation. We shall introduce an extended hydrodynamic model where closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle of Extended Thermodynamics, and in which the main scattering mechanisms such as those with phonons and surface roughness have been considered. By using this model, the low-field mobility of a Gate-All-Around SiNW transistor has been evaluated.
topic	Nanowires Semiconductors Boltzmann equation Hydrodynamics
url	http://link.springer.com/article/10.1186/s13362-018-0056-1
work_keys_str_mv	AT oraziomuscato lowfieldelectronmobilityevaluationinsiliconnanowiretransistorsusinganextendedhydrodynamicmodel AT tinacastiglione lowfieldelectronmobilityevaluationinsiliconnanowiretransistorsusinganextendedhydrodynamicmodel AT vincenzadistefano lowfieldelectronmobilityevaluationinsiliconnanowiretransistorsusinganextendedhydrodynamicmodel AT armandococo lowfieldelectronmobilityevaluationinsiliconnanowiretransistorsusinganextendedhydrodynamicmodel
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Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

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