Characterization of heterogeneous InP-on-Si optical modulators operating between 77 K and room temperature
Heterogeneous integration of InP modulators on a silicon photonic platform, fabricated by bonding III–V wafer on patterned silicon waveguides, are proved to work between 77 K and 295 K. The performance of modulators based on the Franz-Keldysh effect (bulk) and the quantum confined Stark effect (quan...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
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| Series: | APL Photonics |
| Online Access: | http://dx.doi.org/10.1063/1.5120046 |