Influence of boron doping on the photosensitivity of cubic silicon carbide
Photoelectric properties have been studied for 3С-SiC single crystals obtained by thermal decomposition of methyl trichlorosilane with addition of boron in the process of growing or using diffusion into intentionally undoped crystals. Boron-doped samples demonstrate the band of photosensitivity with...
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2019-03-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
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| Online Access: | http://journal-spqeo.org.ua/n1_2019/P092-097abstr.html |