Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenched source region and the gate trench bottom P+ shie...

Full description

Bibliographic Details
Main Authors: Jinhee Cheon, Kwangsoo Kim
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Electronics
Subjects:
4H-SiC
double trench
energy loss
reverse transfer capacitance
source trench
switching
Online Access:https://www.mdpi.com/2079-9292/9/11/1895

Internet

https://www.mdpi.com/2079-9292/9/11/1895

Similar Items