Investigation of Ga<sub>2</sub>O<sub>3</sub>-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

Investigation of Ga<sub>2</sub>O<sub>3</sub>-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

In this work, Ga<sub>2</sub>O<sub>3</sub> films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O<sub>2</sub>) plasma. To improve the quality of Ga<sub>2</sub>O<...

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Bibliographic Details
Main Authors: Shao-Yu Chu, Meng-Xian Shen, Tsung-Han Yeh, Chia-Hsun Chen, Ching-Ting Lee, Hsin-Ying Lee
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Sensors
Subjects:
detectivity
gallium oxide films
plasma-enhanced atomic layer deposition system
metal-semiconductor-metal ultraviolet C photodetectors
photoresponsivity
X-ray photoelectron spectroscopy spectra
Online Access:https://www.mdpi.com/1424-8220/20/21/6159

Internet

https://www.mdpi.com/1424-8220/20/21/6159

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