Charge erasure analysis on the nanoscale using Kelvin probe force microscopy

• Main Authors: Shi-quan Lin, Tian-min Shao
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2017-07-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.4989568

The charge pattern produced by atomic force microscopy on an insulating surface can be detected on the nanoscale using Kelvin probe force microscopy. Recent applications of charge patterns include data storage, nano-xerography, and charge writing. At present, ongoing development of this technology is being restricted by a poor understanding of the charge modification and erasure mechanisms. In this study, modification and erasure of charge patterns are achieved by applying oppositely polarized pulses to an insulating surface. The effects of the oppositely polarized pulse height and width on the charge erasure behavior are examined, and the charge injection and erasure processes are compared. Hence, it is demonstrated that the charges on the patterned surface can be neutralized by adjusting the height and width of the oppositely polarized pulse appropriately. In addition, charge injection and erasure mechanisms are proposed. It is suggested that application of an oppositely polarized pulse to the insulating surface causes injection of opposite charges into the surface and removal of the initial charges, both of which occur simultaneously. The findings of this work provide a means of achieving data re-storage or data modification, for which charge spot erasure is essential. In addition, the findings may have general implications for the development of nano-xerography, charge writing, nano-lithography, etc.