Effect of the spin-on-glass curing atmosphere on In–Ga–Zn–O thin-film transistors
A solution-based spin-on glass (SOG) was applied to the gate insulator of an oxide thin-film transistor (TFT). The curing atmosphere of the SOG was investigated to enhance the performance of the self-aligned top-gate In–Ga–Zn–O (IGZO) TFT. After the SOG layer was formed on an IGZO active layer, curi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2020-10-01
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| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/15980316.2019.1710586 |