Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability

Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability

In the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes, and dimensions. The effect of MOSFET scaling on electrostatic discharge (ESD) and electrical overstress (EOS) reliability and robustness have both positive and...

Full description

Bibliographic Details
Main Author: Steven H. Voldman
Format: Article
Language:English
Published: Frontiers Media S.A. 2018-07-01
Series:Frontiers in Materials
Subjects:
MOSFET scaling
electrostatic discharge
electrical overstress
latchup
scaling theory
Online Access:https://www.frontiersin.org/article/10.3389/fmats.2018.00033/full
Description
Summary:In the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes, and dimensions. The effect of MOSFET scaling on electrostatic discharge (ESD) and electrical overstress (EOS) reliability and robustness have both positive and negative implications. In this publication, the evolutionary and revolutionary technology changes on how they influence the ESD and EOS results will be discussed in full detail. The paper will discuss changes in the substrate, wells, isolation, source/drain regions, gate dielectrics, inter-level dielectrics, and interconnects.
ISSN:2296-8016

Similar Items