Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
In the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes, and dimensions. The effect of MOSFET scaling on electrostatic discharge (ESD) and electrical overstress (EOS) reliability and robustness have both positive and...
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2018-07-01
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| Series: | Frontiers in Materials |
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| Online Access: | https://www.frontiersin.org/article/10.3389/fmats.2018.00033/full |