Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells
Ultra-thin and large-area silicon wafers with a thickness in the range of 20–70 μm, were produced by spalling using a nickel stressor layer. A new equation for predicting the thickness of the spalled silicon was derived from the Suo–Hutchinson mechanical model and the kinking mechanism. To confirm t...
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Frontiers Media S.A.
2019-01-01
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| Series: | Frontiers in Chemistry |
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| Online Access: | https://www.frontiersin.org/article/10.3389/fchem.2018.00600/full |
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doaj-8b78c46998c9405eb0944a4fb76fedf12020-11-25T00:53:40ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462019-01-01610.3389/fchem.2018.00600426379Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar CellsHyun-Seock Yang0Hyun-Seock Yang1Jiwon Kim2Seil Kim3Nu Si A. Eom4Sangmuk Kang5Chang-Soon Han6Sung Hae Kim7Donggun Lim8Jung-Ho Lee9Sung Heum Park10Jin Woo Choi11Chang-Lyoul Lee12Bongyoung Yoo13Jae-Hong Lim14Electrochemistry Department, Korea Institute of Materials Science, Changwon, South KoreaDepartment of Physics, Pukyong National UniversityBusan, South KoreaElectrochemistry Department, Korea Institute of Materials Science, Changwon, South KoreaElectrochemistry Department, Korea Institute of Materials Science, Changwon, South KoreaElectrochemistry Department, Korea Institute of Materials Science, Changwon, South KoreaDepartment of IT Convergence, Korea National University of Transportation, Chungju, South KoreaLaser Advanced System Industrialization Center, Mam-myeun, South KoreaDepartment of Materials Engineering, Hanyang University, Ansan, South KoreaDepartment of IT Convergence, Korea National University of Transportation, Chungju, South KoreaDepartment of Materials Engineering, Hanyang University, Ansan, South KoreaDepartment of Physics, Pukyong National UniversityBusan, South KoreaAdvanced Photonics Research Institute, Gwangju, South KoreaAdvanced Photonics Research Institute, Gwangju, South KoreaDepartment of Materials Engineering, Hanyang University, Ansan, South KoreaElectrochemistry Department, Korea Institute of Materials Science, Changwon, South KoreaUltra-thin and large-area silicon wafers with a thickness in the range of 20–70 μm, were produced by spalling using a nickel stressor layer. A new equation for predicting the thickness of the spalled silicon was derived from the Suo–Hutchinson mechanical model and the kinking mechanism. To confirm the reliability of the new equation, the proportional factor of stress induced by the nickel on the silicon wafer, was calculated. The calculated proportional factor of λ = 0.99 indicates that the thickness of the spalled silicon wafer is proportional to that of the nickel layer. A similar relationship was observed in the experimental data obtained in this study. In addition, the thickness of the stressor layer was converted to a value of stress as a guide when using other deposition conditions and materials. A silicon wafer with a predicted thickness of 50 μm was exfoliated for further analysis. In order to spall a large-area (150 × 150 mm2 or 6 × 6 in2) silicon wafer without kerf loss, initial cracks were formed by a laser pretreatment at a proper depth (50 μm) inside the exfoliated silicon wafer, which reduced the area of edge slope (kerf loss) from 33 to 3 mm2. The variations in thickness of the spalled wafer remained under 4%. Moreover, we checked the probability of degradation of the spalled wafers by using them to fabricate solar cells; the efficiency and ideality factor of the spalled silicon wafers were found to be 14.23%and 1.35, respectively.https://www.frontiersin.org/article/10.3389/fchem.2018.00600/fullultra-thin silicon waferspallingstressor layerkerf lossedge slopeelectrodeposition |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Hyun-Seock Yang Hyun-Seock Yang Jiwon Kim Seil Kim Nu Si A. Eom Sangmuk Kang Chang-Soon Han Sung Hae Kim Donggun Lim Jung-Ho Lee Sung Heum Park Jin Woo Choi Chang-Lyoul Lee Bongyoung Yoo Jae-Hong Lim |
| spellingShingle |
Hyun-Seock Yang Hyun-Seock Yang Jiwon Kim Seil Kim Nu Si A. Eom Sangmuk Kang Chang-Soon Han Sung Hae Kim Donggun Lim Jung-Ho Lee Sung Heum Park Jin Woo Choi Chang-Lyoul Lee Bongyoung Yoo Jae-Hong Lim Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells Frontiers in Chemistry ultra-thin silicon wafer spalling stressor layer kerf loss edge slope electrodeposition |
| author_facet |
Hyun-Seock Yang Hyun-Seock Yang Jiwon Kim Seil Kim Nu Si A. Eom Sangmuk Kang Chang-Soon Han Sung Hae Kim Donggun Lim Jung-Ho Lee Sung Heum Park Jin Woo Choi Chang-Lyoul Lee Bongyoung Yoo Jae-Hong Lim |
| author_sort |
Hyun-Seock Yang |
| title |
Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells |
| title_short |
Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells |
| title_full |
Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells |
| title_fullStr |
Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells |
| title_full_unstemmed |
Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells |
| title_sort |
kerf-less exfoliated thin silicon wafer prepared by nickel electrodeposition for solar cells |
| publisher |
Frontiers Media S.A. |
| series |
Frontiers in Chemistry |
| issn |
2296-2646 |
| publishDate |
2019-01-01 |
| description |
Ultra-thin and large-area silicon wafers with a thickness in the range of 20–70 μm, were produced by spalling using a nickel stressor layer. A new equation for predicting the thickness of the spalled silicon was derived from the Suo–Hutchinson mechanical model and the kinking mechanism. To confirm the reliability of the new equation, the proportional factor of stress induced by the nickel on the silicon wafer, was calculated. The calculated proportional factor of λ = 0.99 indicates that the thickness of the spalled silicon wafer is proportional to that of the nickel layer. A similar relationship was observed in the experimental data obtained in this study. In addition, the thickness of the stressor layer was converted to a value of stress as a guide when using other deposition conditions and materials. A silicon wafer with a predicted thickness of 50 μm was exfoliated for further analysis. In order to spall a large-area (150 × 150 mm2 or 6 × 6 in2) silicon wafer without kerf loss, initial cracks were formed by a laser pretreatment at a proper depth (50 μm) inside the exfoliated silicon wafer, which reduced the area of edge slope (kerf loss) from 33 to 3 mm2. The variations in thickness of the spalled wafer remained under 4%. Moreover, we checked the probability of degradation of the spalled wafers by using them to fabricate solar cells; the efficiency and ideality factor of the spalled silicon wafers were found to be 14.23%and 1.35, respectively. |
| topic |
ultra-thin silicon wafer spalling stressor layer kerf loss edge slope electrodeposition |
| url |
https://www.frontiersin.org/article/10.3389/fchem.2018.00600/full |
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