Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells

Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells

Ultra-thin and large-area silicon wafers with a thickness in the range of 20–70 μm, were produced by spalling using a nickel stressor layer. A new equation for predicting the thickness of the spalled silicon was derived from the Suo–Hutchinson mechanical model and the kinking mechanism. To confirm t...

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Bibliographic Details
Main Authors: Hyun-Seock Yang, Jiwon Kim, Seil Kim, Nu Si A. Eom, Sangmuk Kang, Chang-Soon Han, Sung Hae Kim, Donggun Lim, Jung-Ho Lee, Sung Heum Park, Jin Woo Choi, Chang-Lyoul Lee, Bongyoung Yoo, Jae-Hong Lim
Format: Article
Language:English
Published: Frontiers Media S.A. 2019-01-01
Series:Frontiers in Chemistry
Subjects:
ultra-thin silicon wafer
spalling
stressor layer
kerf loss
edge slope
electrodeposition
Online Access:https://www.frontiersin.org/article/10.3389/fchem.2018.00600/full

Internet

https://www.frontiersin.org/article/10.3389/fchem.2018.00600/full

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