Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

We report on the realization and first demonstration of CW near-milliwatt-power emission at λ = 390 nm from resonant-cavity light-emitting diode (RCLED) on GaN templates. The vertical cavity consists of a bottom AlGaN/GaN distributed Bragg reflector and a top dielectric SiO2/ZrO2 mirror e...

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Bibliographic Details
Main Authors: T. Moudakir, F. Genty, M. Kunzer, P. Borner, T. Passow, S. Suresh, G. Patriarche, K. Kohler, W. Pletschen, J. Wagner, A. Ougazzaden
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Photonics Journal
Subjects:
Distributed Bragg reflector (DBR)
GaN
AlGaN
resonant-cavity light-emitting diode (RCLED)
UV
fiber coupling
Online Access:https://ieeexplore.ieee.org/document/6655957/

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https://ieeexplore.ieee.org/document/6655957/

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