Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method
<p>Because the conditions under which semi-insulating 4H-SiC crystals can grow are so specific, other polytypes such as 15R and 6H can easily emerge during the growth process. In this work, a polytype stabilization technology was developed by altering the following parameters: growth temperatu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Kaunas University of Technology
2016-05-01
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| Series: | Medžiagotyra |
| Subjects: | |
| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/12914 |