Ultra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications

Ultra-Low Power, Process-Tolerant 10T (PT10T) SRAM with Improved Read/Write Ability for Internet of Things (IoT) Applications

In this paper, an ultra-low power (ULP) 10T static random access memory (SRAM) is presented for Internet of Things (IoT) applications, which operates at sub-threshold voltage. The proposed SRAM has the tendency to operate at low supply voltages with high static and dynamic noise margins. The IoT app...

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Bibliographic Details
Main Authors: Pooran Singh, Santosh Kumar Vishvakarma
Format: Article
Language:English
Published: MDPI AG 2017-09-01
Series:Journal of Low Power Electronics and Applications
Subjects:
power gating
read decoupling
read–write static noise margin
dynamic noise margin
read–write energy
leakage power
Online Access:https://www.mdpi.com/2079-9268/7/3/24

Internet

https://www.mdpi.com/2079-9268/7/3/24

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