Photoluminescent method for studying the plastic deformation at the boudary of «SiO2—Si»
The possibility of using the photoluminescence method for studying the mechanisms of plastic deformation at the boundary of "SiO2—Si" in the process of obtaining nanostructured silicon layers by deformation.
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2012-04-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2012/2_2012/pdf/10.zip |