Wet Chemical Oxidation to Improve Interfacial Properties of Al<sub>2</sub>O<sub>3</sub>/Si and Interface Analysis of Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub>/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement

Wet Chemical Oxidation to Improve Interfacial Properties of Al<sub>2</sub>O<sub>3</sub>/Si and Interface Analysis of Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub>/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement

A thin silicon oxide (SiO<sub>x</sub>) layer (thickness: 1.5–2.0 nm) formed at an Al<sub>2</sub>O<sub>3</sub>/Si interface can enhance the interface properties. However, it is challenging to control the characteristics of thin SiO<sub>x</sub> layers be...

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Bibliographic Details
Main Authors: Kwan Hong Min, Sungjin Choi, Myeong Sang Jeong, Sungeun Park, Min Gu Kang, Jeong In Lee, Yoonmook Kang, Donghwan Kim, Hae-Seok Lee, Hee-eun Song
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Energies
Subjects:
aluminum oxide
silicon oxide
quasi steady-state photoconductance
surface passivation
crystalline silicon (c-Si) solar cell
plasma-assisted atomic layer deposition
Online Access:https://www.mdpi.com/1996-1073/13/7/1803

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https://www.mdpi.com/1996-1073/13/7/1803

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