Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

Temperature dependent threshold voltage (Vth) variation of GaN/AlGaN/Gd2O3/Ni-Au structure is investigated by capacitance-voltage measurement with temperature varying from 25°C to 150°C. The Vth of the Schottky device without oxide layer is slightly changed with respect to temperature. However, vari...

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Bibliographic Details
Main Authors:	Atanu Das, Liann Be Chang, Ray Ming Lin
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2012-09-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4750481

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