Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure
Temperature dependent threshold voltage (Vth) variation of GaN/AlGaN/Gd2O3/Ni-Au structure is investigated by capacitance-voltage measurement with temperature varying from 25°C to 150°C. The Vth of the Schottky device without oxide layer is slightly changed with respect to temperature. However, vari...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4750481 |