Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light
Si is well-known semiconductor that has a fundamental bandgap energy of 1.12 eV. Its photogenerated electrons in the conduction band can react with the ubiquitous oxygen molecules to yield ⋅O2− radicals, but the photogenerated holes in the valance band can’t interact with OH− to produce ⋅OH radicals...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922510 |