UV Total Dose Nonvolatile Sensor Using Fluorine-Treated SOHOS Capacitor Device
The fluorine-treated silicon–silicon oxide–hafnium oxide–silicon oxide–silicon capacitor device (hereafter F-SOHOS) could be a candidate for UV radiation total dose (hereafter TD) nonvolatile sensor. The UV radiation induces a significant increase in the threshold voltage VT of the F-SOHOS capacitor...
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| Format: | Article |
| Language: | English |
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MDPI AG
2017-11-01
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| Series: | Proceedings |
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| Online Access: | https://www.mdpi.com/2504-3900/2/3/144 |